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Physical Society Colloquium[an error occurred while processing this directive]
Brian Stephenson
Materials Science Division The evolution of atomic-scale surface morphology during crystal growth is determined by a complex interplay between factors such as deposition rate, surface transport, and the crystallographic orientation of the surface, which together determine the growth mechanism. We have used grazing-incidence x-ray scattering to observe atomic-scale surface morphology in real time during near-atmospheric-pressure metallo-organic chemical vapor deposition (MOCVD). This talk will present examples from our studies of MOCVD growth of GaAs, which include observations of intensity oscillations during layer-by-layer growth, the transition between and layer-by-layer and step-flow growth modes, and diffuse scattering determination of island nucleation densities. Initial results from recent studies of MOCVD growth of GaN will also be presented.
Friday, March 13th, 15:30 |